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Nano Lett. 2016 Aug 10;16(8):5120-8. doi: 10.1021/acs.nanolett.6b02046. Epub 2016 Jul 29.

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

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Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University , Beijing 100871, China.
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Suzhou, 215123, China.


Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.


Carbon nanotube; field-effect transistor; medium scale integrated circuit; threshold voltage variation

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