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Sci Rep. 2016 Jul 26;6:30449. doi: 10.1038/srep30449.

Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric.

Jang SK1, Youn J1, Song YJ1,2,3, Lee S1,4,5.

Author information

1
SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, South Korea.
2
Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, South Korea.
3
Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 Republic of Korea.
4
College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, South Korea.
5
Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, South Korea.

Abstract

Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality.

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