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Science. 2016 Jul 15;353(6296):274-8. doi: 10.1126/science.aad8609.

Discovery of robust in-plane ferroelectricity in atomic-thick SnTe.

Author information

1
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
2
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
3
Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China.
4
Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
5
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
6
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China. xc@mail.tsinghua.edu.cn shji@mail.tsinghua.edu.cn.
7
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China. RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan. xc@mail.tsinghua.edu.cn shji@mail.tsinghua.edu.cn.

Abstract

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T(c) of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

PMID:
27418506
DOI:
10.1126/science.aad8609
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