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Adv Mater. 2016 Oct;28(37):8302-8308. doi: 10.1002/adma.201602757. Epub 2016 Jul 8.

High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.

Author information

1
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
2
Department of Physics and Lab Nanoscale Condense Matter Physics, Xiamen University, Xiamen, 361005, China.
3
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan.
4
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China. liaolei@whu.edu.cn.
5
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
6
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215000, China.

Abstract

High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2 . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.

KEYWORDS:

MoS2; contact resistance; hexagonal boron nitride; tunneling

PMID:
27387603
DOI:
10.1002/adma.201602757

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