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ACS Nano. 2016 Jul 26;10(7):6782-90. doi: 10.1021/acsnano.6b02395. Epub 2016 Jun 21.

Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.

Author information

1
Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States.
2
Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States.
3
Department of Chemical Engineering and Materials Science, University of Southern California , Los Angeles, California 90089, United States.
4
Carbonics Inc. , Marina del Rey, California 90292, United States.

Abstract

In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.

KEYWORDS:

70 GHz; aligned; carbon nanotubes; linearity; polyfluorene-sorted; radio frequency; record RF performance; self-aligned T-shape gate

PMID:
27327074
DOI:
10.1021/acsnano.6b02395

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