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Angew Chem Int Ed Engl. 2016 Jul 25;55(31):8884-8. doi: 10.1002/anie.201602499. Epub 2016 Jun 17.

Alcohol-Mediated Resistance-Switching Behavior in Metal-Organic Framework-Based Electronic Devices.

Author information

1
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
2
Key Laboratory of Flexible Electronics, Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, P. R. China.
3
Key Laboratory of Flexible Electronics, Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, P. R. China. fengweihuo@outlook.com.
4
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore. chenxd@ntu.edu.sg.

Abstract

Metal-organic frameworks (MOFs) have drawn increasing attentions as promising candidates for functional devices. Herein, we present MOF films in constructing memory devices with alcohol mediated resistance switching property, where the resistance state is controlled by applying alcohol vapors to achieve multilevel information storage. The ordered packing mode and the hydrogen bonding system of the guest molecules adsorbed in MOF crystals are shown to be the reason for the alcohol mediated electrical switching. This chemically mediated memory device can be a candidate in achieving environment-responsive devices and exhibits potential applications in wearable information storage systems.

KEYWORDS:

chemically mediated memory; flexible devices; metal-organic frameworks; resistance switching; supramolecular chemistry

PMID:
27311703
DOI:
10.1002/anie.201602499

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