Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes

Anastasia Holovchenko; Julien Dugay; Mónica Giménez-Marqués; Ramón Torres-Cavanillas; Eugenio Coronado; Herre S J van der Zant

doi:10.1002/adma.201600890

Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes

Adv Mater. 2016 Sep;28(33):7228-33. doi: 10.1002/adma.201600890. Epub 2016 May 17.

Authors

Anastasia Holovchenko¹, Julien Dugay¹, Mónica Giménez-Marqués², Ramón Torres-Cavanillas², Eugenio Coronado², Herre S J van der Zant¹

Affiliations

¹ Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands.
² Instituto de Ciencia Molecular, Unversidad de Valencia, Catedrático José Beltrán 2, 46980, Paterna, Spain.

PMID: 27184546
DOI: 10.1002/adma.201600890

Abstract

The charge transport properties of SCO [Fe(Htrz)2 (trz)](BF4 ) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.

Keywords: bistability; graphene; molecular electronics; molecular spintronics; nanoparticles; spin-crossover.