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Nanoscale. 2016 May 19;8(20):10799-805. doi: 10.1039/c6nr01277a.

Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions.

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Nanoelektronik, Technische Fakult├Ąt, Christian-Albrechts-Universit├Ąt zu Kiel, Kiel 24143, Germany.
Highly Correlated Matter Research Group, Physics Department, University of Johannesburg P. O. Box 524, Auckland Park 2006, South Africa.
Centre for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea.


A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb(Zr0.3Ti0.7)O3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.


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