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Nanoscale. 2016 May 19;8(20):10799-805. doi: 10.1039/c6nr01277a.

Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions.

Author information

1
Nanoelektronik, Technische Fakult├Ąt, Christian-Albrechts-Universit├Ąt zu Kiel, Kiel 24143, Germany. soro@tf.uni-kiel.de hko@tf.uni-kiel.de.
2
Highly Correlated Matter Research Group, Physics Department, University of Johannesburg P. O. Box 524, Auckland Park 2006, South Africa.
3
Centre for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr.

Abstract

A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb(Zr0.3Ti0.7)O3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.

PMID:
27166713
DOI:
10.1039/c6nr01277a

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