Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

Affiliations

• ¹ School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
• ² Graduate School of Energy Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, South Korea.
• ³ SKKU Advanced Institute of nanotechnology, Sungkyunkwan University, Suwon, 440-746, South Korea.
• ⁴ Department of Electrical Engineering, Stanford University, California, CA, 94305, USA.
• ⁵ Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 443-803, South Korea.
• ⁶ Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.