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Adv Mater. 2016 Jul;28(25):5019-24. doi: 10.1002/adma.201600722. Epub 2016 Apr 28.

Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate.

Author information

1
School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China.
2
School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, P. R. China.
3
School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China.
4
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

Abstract

Anisotropic 2D layered material rhenium disulfide (ReS2 ) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460-900 °C with high efficiency.

KEYWORDS:

2D anisotropic materials; Re-Te binary eutectic; epitaxial growth; high crystal quality; rhenium disulphide (ReS2)

PMID:
27121002
DOI:
10.1002/adma.201600722

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