Format

Send to

Choose Destination
Adv Mater. 2016 Jun;28(24):4845-51. doi: 10.1002/adma.201600100. Epub 2016 Apr 26.

On the Quantum Spin Hall Gap of Monolayer 1T'-WTe2.

Zheng F1,2, Cai C1,2, Ge S1,2, Zhang X3, Liu X1,2, Lu H1,2, Zhang Y1,2, Qiu J1,2, Taniguchi T4, Watanabe K4, Jia S1,2, Qi J5, Chen JH1,2, Sun D1,2, Feng J1,2.

Author information

1
International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China.
2
Collaborative Center for Materials Innovation, Beijing, 100871, P. R. China.
3
School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China.
4
High Pressure Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
5
School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, 221116, P. R. China.

Abstract

Positive quantum spin Hall gap in mono-layer 1T'-WTe2 is consistently supported by density-functional theory calculations, ultrafast pump-probe, and electrical transport measurements. It is argued that monolayer 1T'-WTe2 , which was predicted to be a semimetallic quantum spin Hall material, is likely a truly 2D quantum spin Hall insulator with a positive quantum spin Hall gap.

KEYWORDS:

Schottcky junctions; density functional theory; quantum spin Hall effect; ultra-fast spectroscopy

PMID:
27115098
DOI:
10.1002/adma.201600100

Supplemental Content

Full text links

Icon for Wiley
Loading ...
Support Center