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Nanoscale Res Lett. 2016 Dec;11(1):191. doi: 10.1186/s11671-016-1420-y. Epub 2016 Apr 12.

Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

Wang Y1,2, Yang Z3,4,5, Wu X1,2, Han N6,7, Liu H8, Wang S8, Li J8, Tse W3, Yip S3,4,5, Chen Y1,2, Ho JC9,10,11.

Author information

1
State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China.
2
Center for Excellence in Urban Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen, 361021, China.
3
Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong.
4
State Key Laboratory of Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong.
5
Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China.
6
State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China. nhan@ipe.ac.cn.
7
Center for Excellence in Urban Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen, 361021, China. nhan@ipe.ac.cn.
8
Beijing National Day School, Beijing, 100039, China.
9
Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong. johnnyho@cityu.edu.hk.
10
State Key Laboratory of Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong. johnnyho@cityu.edu.hk.
11
Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China. johnnyho@cityu.edu.hk.

Abstract

Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

KEYWORDS:

Chemical vapor deposition; Contact printing; GaAs; Nanowire parallel arrays; Schottky solar cells; Two-source

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