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Sci Rep. 2016 Mar 31;6:23933. doi: 10.1038/srep23933.

Field-driven domain wall motion under a bias current in the creep and flow regimes in Pt/[CoSiB/Pt]N nanowires.

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Department of Physics, Sogang University, Seoul 121-742 Korea.
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
Institute of Physics, Johannes Gutenberg-Universität Mainz, 55128 Mainz, Germany.
Department of Advanced Materials Engineering, Sejong University, Seoul 143-747 Korea.
Department of Physics, Inha University, Incheon 402-751, Korea.


The dynamics of magnetic domain wall (DW) in perpendicular magnetic anisotropy Pt/[CoSiB/Pt]N nanowires was studied by measuring the DW velocity under a magnetic field (H) and an electric current (J) in two extreme regimes of DW creep and flow. Two important findings are addressed. One is that the field-driven DW velocity increases with increasing N in the flow regime, whereas the trend is inverted in the creep regime. The other is that the sign of spin current-induced effective field is gradually reversed with increasing N in both DW creep and flow regimes. To reveal the underlying mechanism of new findings, we performed further experiment and micromagnetic simulation, from which we found that the observed phenomena can be explained by the combined effect of the DW anisotropy, Dzyaloshinskii-Moriya interaction, spin-Hall effect, and spin-transfer torques. Our results shed light on the mechanism of DW dynamics in novel amorphous PMA nanowires, so that this work may open a path to utilize the amorphous PMA in emerging DW-based spintronic devices.

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