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Sci Rep. 2016 Mar 30;6:23823. doi: 10.1038/srep23823.

Sub-10 nm feature chromium photomasks for contact lithography patterning of square metal ring arrays.

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Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University, Seoul 151-747, Korea.
Department of Physics and Astronomy, Department of Biophysics and Chemical Biology, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.


Advances in photolithographic processes have allowed semiconductor industries to manufacture smaller and denser chips. As the feature size of integrated circuits becomes smaller, there has been a growing need for a photomask embedded with ever narrower patterns. However, it is challenging for electron beam lithography to obtain <10 nm linewidths with wafer scale uniformity and a necessary speed. Here, we introduce a photolithography-based, cost-effective mask fabrication method based on atomic layer deposition and overhang structures for sacrificial layers. Using this method, we obtained sub-10 nm square ring arrays of side length 50 μm, and periodicity 100 μm on chromium film, on 1 cm by 1 cm quartz substrate. These patterns were then used as a contact-lithography photomask using 365 nm I-line, to generate metal ring arrays on silicon substrate.

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