Format

Send to

Choose Destination
Nano Lett. 2016 Apr 13;16(4):2548-55. doi: 10.1021/acs.nanolett.6b00104. Epub 2016 Mar 22.

When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors.

Author information

1
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
2
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
3
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology , Hong Kong SAR, China.
4
Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China.

Abstract

One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 × 10(5), responsivity of 2.8 × 10(5) A W(-1), and specific detectivity (D*) of 9.1 × 10(15) Jones at λ = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 × 10(7), responsivity of 5.2 × 10(6) A W(-1) and D* up to 1.7 × 10(18) Jones at λ = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.

KEYWORDS:

Nanowire; ferroelectric polymer; photodetector; photoresponsivity; side-gated

Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center