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Nano Lett. 2016 Apr 13;16(4):2387-92. doi: 10.1021/acs.nanolett.5b05161. Epub 2016 Mar 9.

Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice.

Author information

1
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
2
Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Paris Diderot-Sorbonne Paris Cité , 24 rue Lhomond, 75231 Paris Cedex 05, France.
3
State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
4
Advanced Materials Laboratory, National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.

Abstract

Graphene placed on hexagonal boron nitride (h-BN) has received a wide range of interest due to the improved electrical performance and rich physics from the interface, especially the emergence of superlattice Dirac points as well as Hofstadter butterfly in high magnetic field. Instead of transferring graphene onto h-BN, epitaxial growth of graphene directly on a single-crystal h-BN provides an alternative and promising way to study these interesting superlattice effects due to their precise lattice alignment. Here we report an electrical transport study on epitaxial graphene superlattice on h-BN with a period of ∼15.6 nm. The epitaxial graphene superlattice is clean, intrinsic, and of high quality with a carrier mobility of ∼27 000 cm(2) V(-1) s(-1), which enables the observation of Hofstadter butterfly features originated from the superlattice at a magnetic field as low as 6.4 T. A metal-insulator transition and magnetic field dependent Fermi velocity were also observed, suggesting prominent electron-electron interaction-induced many-body effects.

KEYWORDS:

Fermi velocity; Graphene superlattice; Hofstadter butterfly; many-body effects; metal−insulator transition

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