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Nano Lett. 2016 Mar 9;16(3):1896-902. doi: 10.1021/acs.nanolett.5b05066. Epub 2016 Feb 10.

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.

Author information

1
Physics and Astronomy Department, Wayne State University , Detroit, Michigan 48201, United States.
2
Department of Materials Science and Engineering, The University of Tennessee , Knoxville, Tennessee 37996, United States.
3
Materials Science and Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
4
Physics and Astronomy Department, Michigan State University , East Lansing, Michigan 48824, United States.

Abstract

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ∼0.3 kΩ μm, high on/off ratios up to >10(9), and high drive currents exceeding 320 μA μm(-1). These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 10(2) cm(2) V(-1) s(-1) at room temperature, which increases to >2 × 10(3) cm(2) V(-1) s(-1) at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.

KEYWORDS:

MoS2; MoSe2; WSe2; field-effect transistor; ohmic contact; two-dimensional

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