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Sci Rep. 2016 Jan 19;6:19314. doi: 10.1038/srep19314.

Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration.

Author information

1
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
2
Semiconductor R&D Center, Samsung Electronics, San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, Republic of Korea.
3
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA.

Abstract

The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3-dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.

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