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ACS Appl Mater Interfaces. 2016 Feb 10;8(5):3050-5. doi: 10.1021/acsami.5b10195. Epub 2016 Jan 27.

Oxide-based Synaptic Transistors Gated by Sol-Gel Silica Electrolytes.

Author information

1
School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.

Abstract

Low-temperature sol-gel processed silica electrolyte films showed a high specific capacitance of 3.0 μF/cm(2) due to the electric-double-layer (EDL) effect. Oxide-based transistors gated by such silica electrolyte films show a high on/off ratio (>10(7)) and a very low operation voltage (<2.0 V). The proton-related dynamic modulation in these devices makes them ideal candidates for biological synapse emulation. Short-term synaptic plasticity, such as paired pulse facilitation, was successfully emulated. Most importantly, spiking and logic operation were also demonstrated when two lateral in-plane gates were used as the presynaptic inputs. Our oxide-based EDL transistors gated by sol-gel processed silica electrolyte films provide an interesting approach for synaptic behavior emulation, which is interesting for brain-inspired neuromorphic systems.

KEYWORDS:

artificial synapses; electric-double-layer; neuromorphic systems; oxide-based transistors; silica electrolyte films

PMID:
26775562
DOI:
10.1021/acsami.5b10195

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