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ACS Appl Mater Interfaces. 2016 Jan 27;8(3):1661-6. doi: 10.1021/acsami.5b08961. Epub 2016 Jan 12.

Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.

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State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China.
Department of Electrical and Electronic Engineering, South University of Science and Technology of China , Shenzhen, Guangdong 518055, P. R. China.
Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, JilinUniversity , Changchun 130012, P. R. China.


We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.


ZnO; core−shell nanowires; electroluminescence; gan; heterojunction; localized excitons


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