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Nano Lett. 2016 Jan 13;16(1):637-43. doi: 10.1021/acs.nanolett.5b04367. Epub 2015 Dec 22.

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.

Author information

1
Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
2
Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.

Abstract

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.

KEYWORDS:

InAs nanowires; InAsSb; atomic layer deposition; catalyst-free; crystal structure; electronic properties; mobility; molecular beam epitaxy; phonon−plasmon interaction; self-catalyzed; surface passivation

PMID:
26686394
DOI:
10.1021/acs.nanolett.5b04367
[Indexed for MEDLINE]
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