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Adv Mater. 2016 Feb 3;28(5):864-70. doi: 10.1002/adma.201503715. Epub 2015 Nov 30.

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.

Author information

1
School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
2
Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
3
School of Electronics and Electrical Engineering, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
4
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712, Korea.
5
Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Yongin, 446-712, Korea.
6
School of Electrical Engineering, Korea University, Seoul, 136-701, Korea.
7
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-338, Korea.

Abstract

The effects of graphene n-doping on a metal-graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene-perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W(-1) in photoresponsivity and 3.3 × 10(4) → 5.4 × 10(4) Jones in detectivity).

KEYWORDS:

contact resistance; doping; edge contact; graphene; optoelectronic devices

PMID:
26619053
DOI:
10.1002/adma.201503715

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