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Nano Lett. 2016 Jan 13;16(1):152-6. doi: 10.1021/acs.nanolett.5b03404. Epub 2015 Dec 7.

Monolithically Integrated High-β Nanowire Lasers on Silicon.

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Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
Institute of Advanced Study, Technische Universität München , Lichtenbergstraße 2a, 85748 Garching, Germany.
Institute for Theoretical Physics, University of Bremen , 28334 Bremen, Germany.


Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.


GaAs-AlGaAs; Nanowire lasers; monolithic integration; optical pumping

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