Send to

Choose Destination
Nat Mater. 2015 Dec;14(12):1195-205. doi: 10.1038/nmat4452.

Electrical contacts to two-dimensional semiconductors.

Author information

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA.


The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as well as other emerging two-dimensional semiconductors such as atomically thin black phosphorus, is significantly affected by the electrical contacts that connect these materials with external circuitry. Here, we present a comprehensive treatment of the physics of such interfaces at the contact region and discuss recent progress towards realizing optimal contacts for two-dimensional materials. We also discuss the requirements that must be fulfilled to realize efficient spin injection in transition metal dichalcogenides.


Supplemental Content

Full text links

Icon for Nature Publishing Group
Loading ...
Support Center