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Nat Mater. 2015 Dec;14(12):1195-205. doi: 10.1038/nmat4452.

Electrical contacts to two-dimensional semiconductors.

Author information

1
Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
2
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA.

Abstract

The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as well as other emerging two-dimensional semiconductors such as atomically thin black phosphorus, is significantly affected by the electrical contacts that connect these materials with external circuitry. Here, we present a comprehensive treatment of the physics of such interfaces at the contact region and discuss recent progress towards realizing optimal contacts for two-dimensional materials. We also discuss the requirements that must be fulfilled to realize efficient spin injection in transition metal dichalcogenides.

PMID:
26585088
DOI:
10.1038/nmat4452

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