Format

Send to

Choose Destination
Nano Lett. 2015 Dec 9;15(12):8245-9. doi: 10.1021/acs.nanolett.5b03770. Epub 2015 Nov 23.

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering.

Author information

1
Department of Physics and Astronomy, The Johns Hopkins University , Baltimore, Maryland 21218, United States.
2
Department of Physics, University of Colorado , Boulder, Colorado 80309, United States.
3
Condensed Matter Physics and Materials Science, Brookhaven National Lab , Upton, New York 11973, United States.

Abstract

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

KEYWORDS:

Topological insulator; heterostructure; molecular beam epitaxy; quantum Hall effect; thin films

Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center