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Sci Rep. 2015 Nov 13;5:16563. doi: 10.1038/srep16563.

High-Performance Planar-Type Photodetector on (100) Facet of MAPbI3 Single Crystal.

Author information

1
Department of Chemistry, Tsinghua University, Beijing 100084, China.
2
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics &Chemistry, Chinese Academy of Sciences, 40-1 South Beijing Road, Urumqi 830011, China.
3
Collaborative Innovation Center of Quantum Matter, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.

Abstract

Recently, the discovery of organometallic halide perovskites provides promising routes for fabricating optoelectronic devices with low cost and high performance. Previous experimental studies of MAPbI3 optoelectronic devices, such as photodetectors and solar cells, are normally based on polycrystalline films. In this work, a high-performance planar-type photodetector fabricated on the (100) facet of a MAPbI3 single crystal is proposed. We demonstrate that MAPbI3 photodetector based on single crystal can perform much better than that on polycrystalline-film counterpart. The low trap density of MAPbI3 single crystal accounts for the higher carrier mobility and longer carrier diffusion length, resulted in a significant performance increasement of MAPbI3 photodetector. Compared with similar planar-type photodetectors based on MAPbI3 polycrystalline film, our MAPbI3 single crystal photodetector showed excellent performance with good stability and durability, broader response spectrum to near-infrared region, about 10(2) times higher responsivity and EQE, and approximately 10(3) times faster response speed. These results may pave the way for exploiting high-performance perovskites photodetectors based on single crystal.

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