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Phys Chem Chem Phys. 2015 Dec 14;17(46):31247-52. doi: 10.1039/c5cp03326h.

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors.

Author information

1
Physics & Astronomy, University of Sheffield, Hicks Building, Hounsfield Rd, Sheffield S3 7RH, UK. tmalthagafi1@sheffield.ac.uk.
2
Physics Department, King Faisal University, Al-Ahsa, Saudi Arabia.

Abstract

We significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). We find that the organic precursor to ZnO, zinc acetate (ZnAc), dissolves more readily in a 1 : 1 mixture of ethanol (EtOH) and acetone than in pure EtOH, pure acetone, or pure isopropanol. XPS and SEM characterisation show improved morphology of ZnO films converted from a mixed solvent cast ZnAc precursor compared to the EtOH cast precursor. When gated with a biocompatible electrolyte, phosphate buffered saline (PBS), ZnO thin film transistors (TFTs) derived from mixed solvent cast ZnAc give 4 times larger field effect current than similar films derived from ZnAc cast from pure EtOH. The sheet resistance at VG = VD = 1 V is 30 kΩ □(-1), lower than for any organic TFT, and lower than for any electrolyte-gated ZnO TFT reported to date.

PMID:
26549322
DOI:
10.1039/c5cp03326h
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