Format

Send to

Choose Destination
Nat Commun. 2015 Oct 28;6:8662. doi: 10.1038/ncomms9662.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance.

Author information

1
Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do 565-902, Korea.
2
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
3
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
4
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Korea.
5
Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea.
6
Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210-1142, USA.
7
School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
8
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
9
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
10
Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 100-715, Korea.

Abstract

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼ 24,000 cm(2) V(-1) s(-1) at room temperature, higher than that (∼ 13,000 (2) V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

Supplemental Content

Full text links

Icon for Nature Publishing Group Icon for PubMed Central
Loading ...
Support Center