Format

Send to

Choose Destination
Nanoscale Res Lett. 2015 Dec;10(1):420. doi: 10.1186/s11671-015-1118-6. Epub 2015 Oct 26.

Conductance Quantization in Resistive Random Access Memory.

Li Y1,2, Long S3,4, Liu Y5, Hu C6, Teng J7, Liu Q8,9, Lv H10,11, Suñé J12, Liu M13,14.

Author information

1
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liyang_leon@163.com.
2
Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liyang_leon@163.com.
3
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. longshibing@ime.ac.cn.
4
Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. longshibing@ime.ac.cn.
5
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing, 100083, China. l_young@live.cn.
6
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing, 100083, China. huge19910816@163.com.
7
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing, 100083, China. tengjiao@mater.ustb.edu.cn.
8
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liuqi@ime.ac.cn.
9
Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liuqi@ime.ac.cn.
10
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. lvhangbing@ime.ac.cn.
11
Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. lvhangbing@ime.ac.cn.
12
Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain. jordi.sune@uab.cat.
13
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liuming@ime.ac.cn.
14
Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liuming@ime.ac.cn.

Abstract

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

KEYWORDS:

Conductance quantization; Conductive filament (CF); Resistive random access memory (RRAM); Resistive switching (RS)

Supplemental Content

Full text links

Icon for Springer Icon for PubMed Central
Loading ...
Support Center