Ba(Zn(1-2x)MnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

Huiyuan Man; Shengli Guo; Yu Sui; Yang Guo; Bin Chen; Hangdong Wang; Cui Ding; F L Ning

doi:10.1038/srep15507

Ba(Zn(1-2x)MnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

Sci Rep. 2015 Oct 23:5:15507. doi: 10.1038/srep15507.

Authors

Huiyuan Man^{1

2}, Shengli Guo^{1

2}, Yu Sui³, Yang Guo⁴, Bin Chen⁴, Hangdong Wang⁴, Cui Ding^{1

2}, F L Ning^{1

2}

Affiliations

¹ Department of Physics, Zhejiang University, Hangzhou 310027, China.
² Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
³ Center for Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China.
⁴ Department of Physics, Hangzhou Normal University, Hangzhou 310016, China.

Abstract

We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn(1-2x)MnxCux)2As2 (0.025 ≤ x ≤ 0.2) with the crystal structure identical to that of "122" family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with [formula in text] and a DC magnetic field dependence of [formula in text], demonstrating that a spin glass transition takes place at Tf. As large as -53% negative magnetoresistance has been observed in Ba(Zn(1-2x)MnxCux)2As2, enabling its possible application in memory devices.

Publication types

Research Support, Non-U.S. Gov't