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Nat Commun. 2015 Oct 7;6:8474. doi: 10.1038/ncomms9474.

Metal-to-insulator switching in quantum anomalous Hall states.

Author information

1
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
2
Department of Physics, Stanford University, Stanford, California 94305, USA.
3
National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310-3706, USA.
4
Institute of Physics, Academia Sinica, Taipei 11529, Taiwan.

Abstract

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr(0.12)Bi(0.26)Sb(0.62))2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. In addition, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

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