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Nano Lett. 2015 Oct 14;15(10):6400-5. doi: 10.1021/acs.nanolett.5b01590. Epub 2015 Sep 16.

Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition.

Author information

1
School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.
2
State Key Laboratory of Silicon Materials, and School of Material Science & Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
3
Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371, Singapore.
4
NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University , 639798, Singapore.

Abstract

In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm(2)/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.

KEYWORDS:

2D materials; In2Se3 monolayer; PVD; high mobility

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