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Nat Commun. 2015 Sep 8;6:8238. doi: 10.1038/ncomms9238.

Ambipolar solution-processed hybrid perovskite phototransistors.

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1
Department of Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia.

Abstract

Organolead halide perovskites have attracted substantial attention because of their excellent physical properties, which enable them to serve as the active material in emerging hybrid solid-state solar cells. Here we investigate the phototransistors based on hybrid perovskite films and provide direct evidence for their superior carrier transport property with ambipolar characteristics. The field-effect mobilities for triiodide perovskites at room temperature are measured as 0.18 (0.17) cm(2) V(-1) s(-1) for holes (electrons), which increase to 1.24 (1.01) cm(2) V(-1) s(-1) for mixed-halide perovskites. The photoresponsivity of our hybrid perovskite devices reaches 320 A W(-1), which is among the largest values reported for phototransistors. Importantly, the phototransistors exhibit an ultrafast photoresponse speed of less than 10 μs. The solution-based process and excellent device performance strongly underscore hybrid perovskites as promising material candidates for photoelectronic applications.

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