Format

Send to

Choose Destination
Phys Rev Lett. 2015 Jul 24;115(4):046602. Epub 2015 Jul 22.

Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe_{2}.

Author information

1
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
2
Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA.
3
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
4
Departments of Physics, Electrical and Mechanical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA.

Abstract

Extremely large magnetoresistance (XMR) was recently discovered in WTe_{2}, triggering extensive research on this material regarding the XMR origin. Since WTe_{2} is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe_{2}: (1) WTe_{2} is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(ϵ_{θ}H) with ϵ_{θ}=(cos^{2}θ+γ^{-2}sin^{2}θ)^{1/2}, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe_{2}, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

Supplemental Content

Full text links

Icon for American Physical Society
Loading ...
Support Center