Send to

Choose Destination
Phys Rev Lett. 2015 Jul 24;115(4):046602. Epub 2015 Jul 22.

Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe_{2}.

Author information

Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA.
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Departments of Physics, Electrical and Mechanical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA.


Extremely large magnetoresistance (XMR) was recently discovered in WTe_{2}, triggering extensive research on this material regarding the XMR origin. Since WTe_{2} is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe_{2}: (1) WTe_{2} is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(ϵ_{θ}H) with ϵ_{θ}=(cos^{2}θ+γ^{-2}sin^{2}θ)^{1/2}, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe_{2}, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

Supplemental Content

Full text links

Icon for American Physical Society
Loading ...
Support Center