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Nanoscale Res Lett. 2015 Dec;10(1):1028. doi: 10.1186/s11671-015-1028-7. Epub 2015 Aug 7.

One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti 0.48)O 3 Nanodot Arrays.

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1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China, xiaoyanzhang001@yeah.net.

Abstract

In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).

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