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Nanoscale Res Lett. 2015 Dec;10(1):1028. doi: 10.1186/s11671-015-1028-7. Epub 2015 Aug 7.

One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti 0.48)O 3 Nanodot Arrays.

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Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China,


In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).

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