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Nat Commun. 2015 Jun 25;6:7383. doi: 10.1038/ncomms8383.

Lead iodide perovskite light-emitting field-effect transistor.

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Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Interdisciplinary Graduate School, Nanyang Technological University, Singapore 639798, Singapore.
Energy Research Institute @ NTU (ERI@N), Research Techno Plaza, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore.
Centre for Disruptive Photonic Technologies, Nanyang Technological University, Nanyang, 21 Nanyang Link, Singapore 637371, Singapore.


Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

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