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Nat Commun. 2015 Jun 25;6:7383. doi: 10.1038/ncomms8383.

Lead iodide perovskite light-emitting field-effect transistor.

Author information

1
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
2
Interdisciplinary Graduate School, Nanyang Technological University, Singapore 639798, Singapore.
3
Energy Research Institute @ NTU (ERI@N), Research Techno Plaza, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore.
4
Centre for Disruptive Photonic Technologies, Nanyang Technological University, Nanyang, 21 Nanyang Link, Singapore 637371, Singapore.

Abstract

Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

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