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Phys Rev Lett. 2015 May 8;114(18):187201. Epub 2015 May 4.

Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field.

Author information

1
Department of Physics, Stanford University, Stanford, California 94305, USA.
2
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.
3
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.

Abstract

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10 000 and a longitudinal resistivity under 1  Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.

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