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Adv Mater. 2015 Jul 1;27(25):3760-6. doi: 10.1002/adma.201500889. Epub 2015 May 15.

High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures.

Author information

1
School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK.
2
School of Physics & Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
3
Institute for Problems of Materials Science, The National Academy of Sciences of Ukraine, Chernivtsi, 58001, Ukraine.
4
Institute of Microelectronics Technology RAS, Chernogolovka, 142432, Russia.
5
Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.

Abstract

High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum.

KEYWORDS:

graphene; indium selenide; photoconductivity; van der Waals crystals

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