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Nano Lett. 2015 Jun 10;15(6):3723-8. doi: 10.1021/acs.nanolett.5b00116. Epub 2015 May 6.

CuSCN-Based Inverted Planar Perovskite Solar Cell with an Average PCE of 15.6%.

Author information

1
†Beijng National Laboratory for Molecular Science, State Key Laboratory of Rare Earth Materials and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China.
2
‡Department of Energy and Resources Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China.

Abstract

Although inorganic hole-transport materials usually possess high chemical stability, hole mobility, and low cost, the efficiency of most of inorganic hole conductor-based perovskite solar cells is still much lower than that of the traditional organic hole conductor-based cells. Here, we have successfully fabricated high quality CH3NH3PbI3 films on top of a CuSCN layer by utilizing a one-step fast deposition-crystallization method, which have lower surface roughness and smaller interface contact resistance between the perovskite layer and the selective contacts in comparison with the films prepared by a conventional two-step sequential deposition process. The average efficiency of the CuSCN-based inverted planar CH3NH3PbI3 solar cells has been improved to 15.6% with a highest PCE of 16.6%, which is comparable to that of the traditional organic hole conductor-based cells, and may promote wider application of the inexpensive inorganic materials in perovskite solar cells.

KEYWORDS:

CuSCN; Perovskite; hole conductor; solar cell

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