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ACS Appl Mater Interfaces. 2015 May 13;7(18):9429-35. doi: 10.1021/acsami.5b01869. Epub 2015 May 1.

Up-scaling graphene electronics by reproducible metal-graphene contacts.

Author information

  • 1†Max-Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany.
  • 2‡Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands.
  • 3§Graphenea S.A., Tolosa Hiribidea 76, 20018 Donostia-San Sebastian, Spain.
  • 4∥King Abdulaziz University, Abdullah Sulayman, 22254 Jeddah, Saudi Arabia.


Chemical vapor deposition (CVD) of graphene on top of metallic foils is a technologically viable method of graphene production. Fabrication of microelectronic devices with CVD grown graphene is commonly done by using photolithography and deposition of metal contacts on top of the transferred graphene layer. This processing is potentially invasive for graphene, yields large spread in device parameters, and can inhibit up-scaling. Here we demonstrate an alternative process technology in which both lithography and contact deposition on top of graphene are prevented. First a prepatterned substrate is fabricated that contains all the device layouts, electrodes and interconnects. Then CVD graphene is transferred on top. Processing parameters are adjusted to yield a graphene layer that adopts the topography of the prepatterned substrate. The metal-graphene contact shows low contact resistances below 1 kΩ μm for CVD graphene devices. The conformal transfer technique is scaled-up to 150 mm wafers with statistically similar devices and with a device yield close to unity.


CTLM; conformal transfer; contact resistance; graphene transistor; reproducible contact

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