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ACS Nano. 2015 May 26;9(5):5585-93. doi: 10.1021/acsnano.5b01848. Epub 2015 Apr 23.

Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics.

Son D1,2, Koo JH1,3, Song JK1,2, Kim J1,2, Lee M1,3, Shim HJ1,2, Park M1,2, Lee M4, Kim JH5, Kim DH1,2,3.

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†Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea.
‡School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea.
§Interdisciplinary Program for Bioengineering, Seoul National University, Seoul 151-742, Republic of Korea.
⊥Department of Physics, Inha University, Incheon, 402-751, Republic of Korea.
∥School of Mechanical Engineering, Pusan National University, Busan 609-735, Republic of Korea.


Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.


carbon nanotubes; charge-trap floating-gate memory; logic gates; stretchable electronics; wearable electronics

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