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Nanoscale Res Lett. 2015 Feb 6;10:45. doi: 10.1186/s11671-015-0743-4. eCollection 2015.

Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene.

Author information

1
Department of Physics, Chung-Ang University, Seoul, 156-756 Republic of Korea.
2
Department of Physics, Sejong University, Seoul, 143-747 Republic of Korea.

Abstract

Chemical vapor deposition (CVD)-grown single-layer graphene samples, transferred onto a transmission electron microscope (TEM) grid and onto a quartz plate, were studied using polarized Raman spectroscopy with differing angles of laser incidence (θ). Two different polarization configurations are used. In an in-plane configuration, the polarization direction of both incident and scattered light is parallel to the graphene plane. In an out-of-plane configuration, the angle between the polarization vector and the graphene plane is the same as the angle of laser incidence (θ). The normalized Raman intensity of the G-band measured in the out-of-plane configuration, with respect to that in the in-plane configuration, was analyzed as a function of θ. The normalized Raman intensity showed approximately cos(2) θ-dependence up to θ = 70°, which can be explained by the fact that only the electric field component of the incident and the scattered photon in the out-of-plane configuration projected onto the graphene plane can contribute to the Raman scattering process because of the perfect confinement of the electrons to the graphene plane.

KEYWORDS:

Graphene; Oblique incidence; Polarized Raman; Raman selection rule

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