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ACS Appl Mater Interfaces. 2015 Apr 22;7(15):8268-74. doi: 10.1021/acsami.5b00086. Epub 2015 Apr 10.

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

Author information

1
†Department of Electronic Engineering, Incheon National University, Incheon 406-772, Korea.
2
⊥Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
3
§Department of Electrical Engineering, Seoul National University, Seoul 151-600, Korea.
4
∥Center for Neuroscience Imaging Research (CNIR), Institute of Basic Science (IBS), School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, Korea.
5
‡Department of Materials Science and Engineering, Chemistry, Mechanical Science and Engineering, Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.

Abstract

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

KEYWORDS:

PVA; a-IGZO; dissolution; inverter; ring oscillators; transient electronics

PMID:
25805699
DOI:
10.1021/acsami.5b00086
[Indexed for MEDLINE]

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