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Adv Mater. 2015 Apr 24;27(16):2656-62. doi: 10.1002/adma.201405289. Epub 2015 Mar 18.

Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors.

Author information

1
Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.

Abstract

Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micro-meter is achieved with a current density of 10.08 μA μm(-1) at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.

KEYWORDS:

alignment; assembly; carbon nanotubes; patterning; transistors

PMID:
25788393
DOI:
10.1002/adma.201405289

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