An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions

Hongwei Tan; Gang Liu; Xiaojian Zhu; Huali Yang; Bin Chen; Xinxin Chen; Jie Shang; Wei D Lu; Yihong Wu; Run-Wei Li

doi:10.1002/adma.201500039

An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions

Adv Mater. 2015 May 6;27(17):2797-803. doi: 10.1002/adma.201500039. Epub 2015 Mar 18.

Authors

Hongwei Tan¹, Gang Liu, Xiaojian Zhu, Huali Yang, Bin Chen, Xinxin Chen, Jie Shang, Wei D Lu, Yihong Wu, Run-Wei Li

Affiliation

¹ Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, PR China; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, PR China.

PMID: 25786781
DOI: 10.1002/adma.201500039

Abstract

A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.

Keywords: adjustable photoconductivity; arithmetic; information demodulating; non-volatile memory; resistive switching.