Format

Send to

Choose Destination
Adv Mater. 2015 Jan 27;27(4):759-65. doi: 10.1002/adma.201404544. Epub 2014 Dec 8.

Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor.

Author information

1
Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.

Abstract

A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.

KEYWORDS:

carbon nanotubes; fullerene; photodetectors; transistors

PMID:
25607919
DOI:
10.1002/adma.201404544

Supplemental Content

Full text links

Icon for Wiley
Loading ...
Support Center