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Nat Commun. 2014 Dec 17;5:5678. doi: 10.1038/ncomms6678.

Two-dimensional flexible nanoelectronics.

Author information

1
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA.
2
Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA.

Abstract

2014/2015 represents the tenth anniversary of modern graphene research. Over this decade, graphene has proven to be attractive for thin-film transistors owing to its remarkable electronic, optical, mechanical and thermal properties. Even its major drawback--zero bandgap--has resulted in something positive: a resurgence of interest in two-dimensional semiconductors, such as dichalcogenides and buckled nanomaterials with sizeable bandgaps. With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.

PMID:
25517105
DOI:
10.1038/ncomms6678

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