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ACS Appl Mater Interfaces. 2015 Jan 21;7(2):1180-7. doi: 10.1021/am506921y. Epub 2015 Jan 6.

Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts.

Author information

1
Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20878, United States.

Abstract

In this work, we compare the electrical characteristics of MoS2 field-effect transistors (FETs) with Ag source/drain contacts with those with Ti and demonstrate that the metal-MoS2 interface is crucial to the device performance. MoS2 FETs with Ag contacts show more than 60 times higher ON-state current than those with Ti contacts. In order to better understand the mechanism of the better performance with Ag contacts, 5 nm Au/5 nm Ag (contact layer) or 5 nm Au/5 nm Ti film was deposited onto MoS2 monolayers and few layers, and the topography of metal films was characterized using scanning electron microscopy and atomic force microscopy. The surface morphology shows that, while there exist pinholes in Au/Ti film on MoS2, Au/Ag forms a smoother and denser film. Raman spectroscopy was carried out to investigate the metal-MoS2 interface. The Raman spectra from MoS2 covered with Au/Ag or Au/Ti film reveal that Ag or Ti is in direct contact with MoS2. Our findings show that the smoother and denser Au/Ag contacts lead to higher carrier transport efficiency.

KEYWORDS:

2D material; Raman spectroscopy; field-effect transistor; metal contact; molybdenum disulfide; transition-metal dichalcogenides

PMID:
25514512
DOI:
10.1021/am506921y

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