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Nano Lett. 2015 Jan 14;15(1):326-31. doi: 10.1021/nl503614v. Epub 2014 Dec 5.

Tunable carrier multiplication and cooling in graphene.

Author information

1
Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL) , 1015 Lausanne, Switzerland.

Abstract

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we observe larger carrier multiplication factors (>3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (p-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.

KEYWORDS:

carrier multiplication; charge carrier tunability; epitaxial graphene; hot carrier dynamics; time-resolved ARPES

PMID:
25458168
DOI:
10.1021/nl503614v

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