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ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22680-6. doi: 10.1021/am506805a. Epub 2014 Dec 11.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

Author information

1
Department of Electronic Materials Engineering, Kwangwoon University , 20 Gwangun-ro, Nowon-gu, Seoul 139-701, Republic of Korea.

Abstract

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

KEYWORDS:

a-InGaZnO; biosensor; dual gate ISFET; microwave annealing; reliability

PMID:
25456792
DOI:
10.1021/am506805a

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